 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX3ASJ-3 HIGH-SPEED SWITCHING USE FX3ASJ-3 OUTLINE DRAWING 6.5 5.0 0.2 4 Dimensions in mm 5.5 0.2 1.5 0.2 0.5 0.1 1.0 max 2.3 min 10 max 1.0 A 0.5 0.2 0.8 0.9 max 2.3 2.3 2.3 1 2 3 3 * 4V DRIVE * VDSS ............................................................. -150V * rDS (ON) (MAX) .................................................. 1.2 * ID ...................................................................... -3A * Integrated Fast Recovery Diode (TYP.) ...........80ns APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. 1 1 2 3 4 24 GATE DRAIN SOURCE DRAIN MP-3 MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage VGS = 0V VDS = 0V Conditions Ratings -150 20 -3 -12 -3 -3 -12 30 -55 ~ +150 -55 ~ +150 Unit V V A A A A A W C C g Jan.1999 Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) L = 100H Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value 0.26 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX3ASJ-3 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25C) Test conditions ID = -1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = -150V, VGS = 0V ID = -1mA, VDS = -10V ID = -1A, VGS = -10V ID = -1A, VGS = -4V ID = -1A, VGS = -10V ID = -1A, VDS = -5V VDS = -10V, VGS = 0V, f = 1MHz Limits Min. -150 -- -- -1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- -1.5 0.93 1.02 -0.93 3.0 1170 81 31 9 7 82 33 -1.0 -- 80 Max. -- 0.1 -0.1 -2.0 1.20 1.32 -1.20 -- -- -- -- -- -- -- -- -1.5 4.17 -- Unit V A mA V V S pF pF pF ns ns ns ns V C/W ns Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = -80V, ID = -1A, VGS = -10V, RGEN = RGS = 50 IS = -1A, VGS = 0V Channel to case IS = -3A, dis/dt = 100A/s PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 50 POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) MAXIMUM SAFE OPERATING AREA -2 -101 40 -7 -5 -3 -2 tw = 10s 100s 1ms 10ms DC TC = 25C Single Pulse 30 -100 -7 -5 -3 -2 20 10 -10-1 -7 -5 -3 -2 -2 -3 -5-7-101 -2 -3 -5-7-102 -2 -3 -5-7-103 -2 0 0 50 100 150 200 CASE TEMPERATURE TC (C) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) -10 VGS = -10V -6V -5V -4V OUTPUT CHARACTERISTICS (TYPICAL) -5.0 VGS = -10V -6V -4V Tc = 25C Pulse Test -3V PD = 30W DRAIN CURRENT ID (A) -8 DRAIN CURRENT ID (A) -4.0 -5V -6 Tc = 25C Pulse Test -3V -3.0 -4 -2.0 -2.5V -2 PD = 30W -1.0 0 0 -4 -8 -12 -16 -20 0 0 -2 -4 -6 -8 -10 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX3ASJ-3 HIGH-SPEED SWITCHING USE ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 2.0 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) () Tc = 25C Pulse Test Tc = 25C Pulse Test ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) -20 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) -16 1.6 VGS = -4V -12 1.2 -10V -8 ID = -6A 0.8 -4 -3A -1A 0.4 0 0 -2 -4 -6 -8 -10 0 -10-1 -2 -3 -5 -7 -100 -2 -3 -5 -7 -101 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) -10 Tc = 25C VDS = -10V Pulse Test FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 TC = 25C 75C 125C DRAIN CURRENT ID (A) FORWARD TRANSFER ADMITTANCE yfs (S) -8 3 2 -6 100 7 5 3 2 VDS = -5V Pulse Test -2 -3 -5 -7 -100 -2 -3 -5 -7 -4 -2 0 0 -2 -4 -6 -8 -10 10-1 -7-10-1 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 104 7 Tch = 25C 5 f = 1MHZ 3 VGS = 0V 2 7 5 3 2 SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 Tch = 25C VDD = -80V VGS = -10V RGEN = RGS = 50 td(off) tf td(on) tr Ciss 103 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 3 2 102 7 5 3 2 Coss Crss -5 -7 -101 -5 -7 -102 101 7 5 3 2 101 0 -10 -2 -3 -2 -3 100 -1 -10 -2 -3 -5 -7 -100 -2 -3 -5 -7 -101 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) Jan.1999 P ion. hange. icat ecif ct to c l sp je fina re sub a not sa is is ric limit t : Th tice arame No e p Som IM REL Y NAR I MITSUBISHI Pch POWER MOSFET FX3ASJ-3 HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) -10 VGS = 0V Pulse Test GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) -10 Tch = 25C ID = -3A SOURCE CURRENT IS (A) -8 -8 -6 VDS = -50V -80V -100V -6 -4 -4 TC = 125C 75C 125C -2 -2 0 0 -4 -8 -12 -16 -20 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 -4.0 7 5 3 2 VGS = -10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = -10V ID = -1mA GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) -3.2 -2.4 100 7 5 3 2 -1.6 -0.8 10-1 -50 0 50 100 150 0 -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) CHANNEL TEMPERATURE Tch (C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) TRANSIENT THERMAL IMPEDANCE Zth (ch-c) (C/W) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4 VGS = 0V ID = -1mA TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 102 7 5 3 2 1.2 101 7 5 D = 1.0 3 0.5 2 0.2 1.0 0.8 PDM 0.1 0.05 0.02 0.01 Single Pulse tw T D= tw T 100 7 5 3 2 0.6 0.4 -50 0 50 100 150 10-1 -4 10 2 3 5 710-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 PULSE WIDTH tw (s) Jan.1999 CHANNEL TEMPERATURE Tch (C) |
Price & Availability of FX3ASJ-3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |